开幕大会/Plenary: Opening Ceremony & Plenary Forum

主题：迎接新挑战 共创新时代/Rise to New Challenges, Rise for a New Era

时间：2019年11月25日下午14:00-18:00

地点：深圳会展中心 • 五层簕杜鹃厅

Time: November 25^th, 2019 Afternoon 14:00-18:00

Location: Shenzhen Convention and Exhibition Center • 5th Floor Bougainvillea Hall

演示文件建议比例/Recommend Slides Size：16:9

14:00-

14:05

开幕式-嘉宾介绍 / Opening Ceremony-Guests Introduction

14:05-

14:20

开幕致辞 / Opening Address

14:20-

14:30

全球半导体照明突出贡献奖颁奖典礼

The Award Ceremony of Global SSL Award of Outstanding Achievement

14:30-

14:45

2019中国创新创业大赛国际第三代半导体专业赛国际及粤港澳大湾区赛区颁奖典礼

The Award Ceremony of IASIC 2019 • the International Division and the Greater Bay Area Division

14:45-

15:00

广东省第三代半导体技术创新中心授牌暨签约仪式

Guangdong Wide Bandgap Semiconductors Technology Innovation Center Unveiling & Signing Ceremony

论坛部分/Reports

15:00-

15:30

从硅基氮化镓LED进展看半导体照明未来

The Prospect of Solid State Lighting from the Recent Progress of GaN/Si based LED

江风益    中国科学院院士，南昌大学副校长、教授，国家硅基LED工程技术研究中心主任， 

JIANG Fengyi    Academician of Chinese Academy of Sciences, Vice President & Professor of Nanchang University, Director of National Silicon-Based Semiconductor Lighting Engineering Technology Research Center

15:30-

16:00

氮化镓功率电子的价值前景

The Value Proposition of Gallium Nitride Power Electronics

Umesh K. MISHRA    美国国家工程院院士、加利福尼亚大学圣芭芭拉分校教授、Transphorm联合创始人&首席技术官

Umesh K. MISHRA    Member of United States National Academy of Engineering; Distinguished Professor of University of California, Santa Barbara; CTO & Co-Founder of Transphorm

16:00-

16:30

在可调光照明应用中研究记录人类行为：一项来自英国、面向未来的案例和实施

Tracking Human Behaviour in Real-World Installations of Spectrally Tuneable Lighting: A UK Case Study and Implications for Future Technology

Anya HURLBERT    英国纽卡斯尔大学视觉神经科学教授、转化系统神经科学中心主任及学院院长

Anya HURLBERT    Professor of Visual Neuroscience, Director of the Centre for Translational Systems Neuroscience and Dean of Advancement at Newcastle University

16:30-

17:00

世界首次基于SiC籽晶生长的AlN单晶

Worldwide first true bulk AlN monocrystal grown on SiC seed

Yuri MAKAROV    Nitride Crystals Inc. 执行总裁

Yuri MAKAROV    President of Nitride Crystals, Inc.

17:00-

17:30

基于转换打印microLED和集成电路的显示技术

Emissive displays with transfer-printed microscale LEDs and ICs

Christopher A. BOWER    美国X-Celeprint Limited首席技术官

Christopher A. BOWER    Chief Technology Officer at X-Celeprint Limited, USA

17:30-

18:00

中国第三代半导体的发展

The Progress of Wide Bandgap Semiconductors in China

第三代半导体产业技术创新战略联盟

China Advanced Semiconductor Industry Innovation Alliance (CASA)

闭幕大会/Plenary: Closing Ceremony & Plenary Forum

时间：2019年11月27日下午13:30-16:30

地点：深圳会展中心 • 六层茉莉厅

Time: November 27^th, 2019 Afternoon 13:30-16:30

Location: Shenzhen Convention and Exhibition Center • 6th Floor Jasmine Hall

演示文件建议尺寸比例/Recommend Slides Size：16:9

13:30-

13:35

主持人开场/Host Opening Address

13:35-

13:50

领导致辞/Welcome Address

论坛部分/Reports

13:50-

14:20

针对microLED和自形成光子结构的纳米线应用

Nanowire-mediated realization of micro LEDs and self-formed photonic structures

Lars SAMUELSON    瑞典皇家科学院院士、瑞典皇家工程科学院院士、瑞典隆德大学教授

Lars SAMUELSON    Member of the Royal Swedish Academy of Sciences; Member of Royal Swedish Academy of Engineering Sciences; Professor of Lund University, Sweden

14:20-

14:50

三安光电化合物半导体发展规划与进展

Compound Semiconductor Development Planning and Progress of Sanan Optoelectronics

林志东    三安光电股份有限公司副总经理，厦门市三安集成电路有限公司副总经理

LIN Zhidong    Vice President of Sanan Optoelectronics Co. Ltd.，Deputy, General Manager of Xiamen Sanan Integrated Circuit Co., Ltd.

14:50-

15:20

硅基氮化镓产业化发展的机遇与挑战

Opportunities and challenges of GaN-on-Si Mass Production

骆薇薇    英诺赛科科技有限公司董事长

LUO Weiwei    Board Chair of Innoscience Technology Co., Ltd.

15:20-

15:50

化合物半导体外延量产解决方案

Epitaxial Manufacturing Solutions for Compound Semiconductors

Jens VOIGT    德国爱思强股份有限公司产品管理总监

Jens VOIGT    Director of Product Management of AIXTRON SE, Germany 

15:50-

16:20

宽禁带功率半导体国际技术路线图

International Technology Roadmap for Wide Bandgap Power Semiconductors

Braham FERREIRA    荷兰代尔夫特理工大学教授

Braham FERREIRA    Professor at Delft University of Technology

16:20-

16:30

闭幕总结 / Closing Summary

P201：衬底、外延及生长装备 / The Technology in Substrate, Epitaxy and Wafer Growth Equipment

时间：2019年11月26日下午14:00-17:30

地点：深圳会展中心•五层菊花厅

Time: Nov 26^th, 2019 Afternoon 14:00-17:30

Location: Shenzhen Convention and Exhibition Center • 5th Floor Chrysanthemum Hall

演示文件建议尺寸比例/Recommend Slides Size：16:9

主持人

Moderator

沈   波/ SHEN Bo

北京大学物理学院教授, 理学部副主任/Professor & Deputy Director, Division of Sciences, Peking University

徐现刚/XU Xiangang

山东大学教授，晶体材料国家重点实验室副主任/Professor & Deputy Director of State Key Laboratory of Crystal Material of Shandong University

14:00-

14:25

同步辐射X射线衍射法实现氮化镓衬底及同质外延薄膜晶格面倾斜可视化

Synchrotron x-ray diffraction-based visualization of lattice-plane tilting of a GaN substrate and epitaxial film

坂田修身    日本国立材料研究所SPring-8 BL15XU线站站长，东京工业大学兼职教授

Osami SAKATA    Station Director of the Synchrotron X-ray Station at SPring-8 and the Group Leaders of the Synchrotron X-ray group and the Synchrotron X-ray Characterization group, National Institute for Materials Science (NIMS); Adjunct Professor at the Tokyo Institute of Technology, Japan

14:25-

14:45

基于MOVPE技术生长GaN表面的原位相干X射线研究

In situ coherent x-ray studies of surface dynamics during OMVPE of GaN

鞠光旭    美国亚利桑那州立大学助理教授

Guangxu JU    Assistant Research Professor of Arizona State University, USA

14:45-

15:05

碳化硅生长和衬底建模以及基于MOVPE技术的氮化镓生长模拟

Modeling of SiC crystal growth and epitaxy and simulation of GaN Metal Organic Vapor Deposition

Andrey SMIRNOV    俄罗斯STR Group, Inc.资深研发工程师

Andrey SMIRNOV    Senior Research Engineer of STR Group, Inc., Russia

15:05-

15:20

蓝宝石基B_0.375GaN/B_0.45GaN量子阱结构的激光二极管中n-p电极对于p型电导率的影响

The effect of n-p electrodes upon the p-type conductivity of B_0.375GaN/B_0.45GaN QW/QB edge emitting laser diode grown over sapphire substrate

Mussaab I. NIASS    郑州大学

Mussaab I. NIASS    Zhengzhou University

15:20-

15:40

工业4.0：对于电子工业和产品的大好时机

INDUSTRY4.0 as A Major Opportunity for Electronics Processes and Products

Guido COLOMBO    意大利ORCHESTRA总裁

Guido COLOMBO    President & CEO of ORCHESTRA, Italy

15:40-

15:55

茶歇/Coffee Break

15:55-

16:15

碳化硅装备和PVT晶体生长的关系

Interrelationship Between Equipment and PVT Crystal Growth in Silicon Carbide

Larry B. ROWLAND   美国Aymont Technology Inc总裁

Larry B. ROWLAND   CEO of Aymont Technology Inc., USA

16:15-

16:35

基于碳化硅器件制造的先进化学浓度控制技术

Advanced Chemical Concentration Control for Fabrication of Devices Using SiC

Ismail I. KASHKOUSH    美国NAURA-Akrion, Inc.首席技术官

Ismail I. KASHKOUSH    Chief Technology Officer (CTO) of NAURA-Akrion, Inc., USA

16:35-

16:55

单晶4H型碳化硅台阶生长机理

The step growth mechanism for 4H-SiC with Improved Single Polytypes

林伟    厦门大学副教授

LIN Wei    Associate Professor of Xiamen University

16:55-

17:15

基于深层瞬态光谱学的Al/Ti 4H-SiC肖特基结构缺陷研究

Investigation of Defect Levels of Al/Ti 4H-SiC Schottky Structures by Deep Level Transient Spectroscopy

何亚伟    中国科学院半导体研究所

HE Yawei    Institute of Semiconductors, Chinese Academy of Sciences

P202：功率电子器件及封装技术 / Technologies for Power Electronics and Packaging

时间：2019年11月26日全天09:00-17:40

地点：深圳会展中心•六层•茉莉厅

Time: Nov 26^th, 2019 09:00-17:40

Location: Shenzhen Convention and Exhibition Center • 6th Floor Jasmine Hall

演示文件建议尺寸比例/Recommend Slides Size：16:9

主持人

Moderator

盛况/SHENG Kuang    

浙江大学特聘教授，电气工程学院院长 / Distinguished Professor, Dean of the College of Electrical Engineering of Zhejiang University

陈敬/Kevin J. CHEN    

香港科技大学教授 / Professor of the Hong Kong University of Science and Technology

陆国权/Guo-Quan LU

美国弗吉尼亚理工大学终身教授、天津大学材料科学与工程学院教授 / Tenured Professor of Virginia Polytechnic Institute and State University, Professor of Tianjin University

09:00-

09:25

碳化硅功率器件最新进展综述

The latest development of SiC power devices

张清纯    北卡罗来纳州立大学客座教授, PowerAmerica研究院功率器件技术主任

Jon Zhang    Visiting Professor of North Carolina State University, Power Device Technology Director in PowerAmerica

09:25-

09:50

碳化硅高压电力电子器件及应用进展

New Progress of SiC high voltage power electronic devices and applications

杨霏    国家电网全球能源互联网研究院功率半导体研究所副总工、教授

YANG Fei    Professor & Deputy Chief Engineer of Institute of Power Semiconductor at Global Energy Interconnection Research Institute, State Grid

09:50-

10:10

改进碳化硅MOSFET R_ONSP的器件结构和工艺研究

SiC MOSFET Device Structure and Process Study

丁国华    苏州锴威特半导体股份有限公司总裁

DING Guohua    CEO of Suzhou Convert Semiconductor Co. Ltd.

10:10-

10:30

大电流1.2kV SiC JBS器件浪涌能力电热分析

Electro-thermal Analysis of 1.2kV-100A SiC JBS Diodes Under Current Overload

汤益丹    中国科学院微电子研究所

Yidan TANG     Institute of Microelectronics of Chinese Academy of Sciences

10:30-

10:50

用于气体检测和生物传感器的碳化硅基石墨烯材料

Graphene-on-SiC for gas detection and bio-sensors

Alexander S. USIKOV    美国Nitride Crystals Inc. 首席技术官

Alexander S. USIKOV    CTO of Nitride Crystals Inc.，USA

10:50-

11:05

茶歇/Coffee Break

11:05-

11:30

高电压宽禁带功率半导体封装技术

Packaging of high-voltage wide-bandgap power semiconductors

Christina DIMARINO    美国弗吉尼亚理工大学助理教授

Christina DIMARINO    Assistant Professor of Polytechnic Institute, Virginia State University, USA

11:30-

11:50

高功率和高温IGBT及功率模块封装研究

High power & high temperature IGBT and WIDE bandgap power semiconductor modual package

朱文辉    中南大学微电子系创建主任、教授

ZHU Wenhui    Professor of Central South University

11:50-

12:10

宽禁带器件的设计和TCAD模拟

Design and TCAD Simulation of Widegap Semiconductor Devices

李湛明    加拿大CROSSLIGHT半导体软件公司创立人兼总裁

Simon LI    Founder & CEO of Crosslight Software Inc., Canada

12:10-

14:00

午休与POSTER交流 / Adjourn & POSTER Communication

14:00-

14:25

击穿电压超过650V同时结温超过150°C的氮化镓功率器件

GaN Power Devices Beyond 650V and 150C

Yifeng WU    美国Transphorm Inc.高级副总裁

Yifeng WU    Senior VP of Engineering, Transphorm Inc., USA

14:25-

14:50

基于半绝缘氮化镓衬底生长的高击穿电压氮化镓HEMT器件

High-breakdown voltage GaN HEMTs fabricated on semi-insulating GaN substrates

Masaaki KUZUHARA    日本福井大学教授

Masaaki KUZUHARA    Professor of University of Fukui, Japan

14:50-

15:10

针对带有反向导通检测功能的E型氮化镓HEMT器件的栅极电源电路设计

A Gate Driver IC for E-mode GaN HEMTs with Reverse Conduction Detection

吴伟东    加拿大多伦多大学教授

Wai Tung NG    Professor of University of Toronto, Canada

15:10-

15:30

常关型AlGaN/GaN HFET功率器件的发展

Development of Normally-off AlGaN/GaN HFETs for Power Electronics

敖金平    日本德岛大学教授, 西安电子科技大学特聘教授

AO Jinping    Professor of the University of Tokushima, Specially-Appointed Professor of Xidian University

15:30-

15:45

通过高品质硅基氮化镓外延以实现无碳掺杂的高隔离性和高动态表现

High crystal quality GaN-on-Si to achieve excellent isolation and dynamic performance without carbon doping

Atsushi NISHIKAWA    德国ALLOS Semiconductors首席技术官

Atsushi NISHIKAWA    Chief Technology Officer of ALLOS Semiconductors, Germany

15:45-

16:00

茶歇/Coffee Break

16:00-

16:20

200mm/8英寸 GaN功率器件和基于GaN的电路技术：一个对于衬底供应商、制造商和代工工厂的全新机遇

200mm/8-inch GaN power device and GaN-IC technology: a new opportunity for wafer suppliers, foundries and IDMs

Denis MARCON    比利时IMEC的高级业务发展经理

Denis MARCON    Sr. Business Development Manager in IMEC, Belgium

16:20-

16:40

200mm 40V-650V E型硅基氮化镓材料功率器件技术：从器件、封装、到系统

200mm 40V-650V E-mode GaN-on-Si Power Technology: from Device, Package, Reliability to System

David C. ZHOU    英诺赛科研发中心副总裁

David C. ZHOU    VP of R&D, Innoscience Technology Co., Ltd.,

16:40-

17:00

氮化镓：启动未来

GaN, Power the Future

傅玥    加拿大GaNPower International Inc. 副总裁兼联合创始人

Fred Yue FU    Vice president and Co-founder of GaNPower International Inc., Canada

17:00-

17:20

高铝组分的AlGaN/GaN异质结pH传感器

AlGaN/GaN heterostructure pH sensors with high Al composition in the barrier layer

周继禹    日本德岛大学

ZHOU Jiyu    Tokushima University, Japan

17:20-

17:40

下一代半导体器件外延制备前期的衬底清理技术

In-situ Wafer Cleaning for Pre-Epitaxial Deposition for Next Generation Semiconductor Devices

Ismail I. KASHKOUSH    美国NAURA-Akrion, Inc.首席技术官

Ismail I. KASHKOUSH    Chief Technology Officer (CTO) of NAURA-Akrion, Inc., USA

P203：微波射频与5G移动通信 / RF Technology and 5G Mobile Communication

时间：2019年11月27日上午09:00-12:00

地点：深圳会展中心 • 五层玫瑰厅1

Time: Nov 27^th, 2019 09:00-12:00

Location: Shenzhen Convention and Exhibition Center • 5th Floor Rose Hall 1

演示文件建议尺寸比例/Recommend Slides Size：4:3

主持人

Moderator

蔡树军/CAI Shujun

河北半导体研究所副所长 / The Deputy Director of Hebei Semiconductor Research Institute

张乃千/ ZHANG Naiqian

苏州能讯高能半导体有限公司董事长/President of Dynax Semiconductor Inc.

09:00-

09:25

适用于第五代行动通讯六吋氮化镓微波功放技術及基站功率电源模块

The Epi structure and Process Considerations of 6-inch GaN RF HEMT for 5G applications

邱显钦    台湾长庚大学教授

Hsien-Chin CHIU    Professor of Chang Gung University

09:25-

09:50

高频氮化镓HEMT器件和MMIC

High frequeny GaN HEMTs and MMICs

Peter BRÜCKNER    德国弗劳恩霍夫应用固体物理研究所部门技术部门经理

Peter BRÜCKNER    Group Manager of Fraunhofer Institute of Applied Solid State Physics, Germany

09:50-

10:15

5G 毫米波应用

5G mm Wave

刘建利    中兴无线技术总工及技术委员会专家

LIU Jianli    Chief Engineer of Wireless Technology of ZTE, Expert of ZTE Technical Committee

10:15-

10:35

高频硅基氮化镓晶体管

High-frequency GaN-on-Si transistors

刘志宏    西安电子科技大学教授

LIU Zhihong    Professor of Xidian University

10:35-

10:50

茶歇/Coffee Break

10:50-

11:15

5G用毫米波Doherty功率放大器的研制

Development of a 5G Doherty Power Amplifier with A Millimeter Wave

张志国    北京国联万众半导体科技有限公司副总经理

ZHANG Zhiguo    Deputy General Manager of Beijing advance semiconductor Co.,ltd

11:15-

11:35

一种新型毫米波氮化镓高线性晶体管

High-linearity GaN HEMTs for millimeter-wave applications

张凯    南京电子器件研究所高级工程师

ZHANG Kai    Senior Engineer of Nanjing Electronic Devices Institute

11:35-

11:55

一种用于微波半导体芯片测试的高集成度多参数射频收发模块设计方法

A Highly Integrated Multi-Parameters RF Module for Microwave Semiconductor Testing

张光山    中国电子科技集团第41研究所

ZHANG Guangshan    The 41st Research Institute of CETC

11:55-

12:10

一种采用氮化镓MMIC和的分离FET器件的HMIC封装技术的便携X波段功率放大器

A Compact X-band Pallet Power Amplifier Using GaN MMIC and Discrete FETs with HMIC Technology

王毅    河北半导体研究所

WANG Yi    Hebei Semiconductor Institute

12:10-

14:00

午休与POSTER交流 / Adjourn & POSTER Communication

P204：固态紫外器件技术/ Solid-State Ultraviolet Device Technology

时间：2019年11月27日 上午 09:00 -12:00

地点：深圳会展中心•六层水仙厅

Time: Nov 27^th, 2019 Morning 09:00 -12:00

Location: Shenzhen Convention and Exhibition Center • 6th Floor Narcissus Hall

演示文件建议尺寸比例/Recommend Slides Size：16:9

主持人

Moderator

康俊勇 / KANG Junyong

厦门大学教授/Professor of Xiamen University

王军喜 / WANG Junxi

中科院半导体所研究员、半导体照明研发中心主任/ Professor and Director of R&D Center for Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences

09:00-

09:25

采用石墨烯衬底和透明底部电极的AlGaN纳米线外延 UV LED

AlGaN nanowire UV LED using graphene as substrate and transparent bottom electrode

Helge WEMAN    挪威科学技术大学教授，挪威科学技术院院士

Helge WEMAN    Professor at the Norwegian University of Science and Technology (NTNU), Norway; Academician of the Norwegian Academy of Technical Sciences (NTVA)

09:25-

09:50

基于宽禁带半导体以及相关应用的UV检测仪器发展现状

Recent Development of UV Photodetectors based on Wide Bandgap Semiconductors and Their Applications

陆海    南京大学教授

LU Hai    Professor of Nanjing University

09:50-

10:15

新型深紫外LED封装发光技术提升

Improvement of Light extraction of Deep UV LED using Novel package

郭浩中    台湾交通大学特聘教授

Hao-Chung(Henry) KUO    Distinguished Professor of National Chiao Tung University

10:15-

10:35

基于中微Prismo HiT3^TM MOCVD设备的深紫外LED结构优化

Optimization of AlGaN Based UVC LED Structure with AMEC Prismo HiT3 MOCVD Platform

胡建正    中微半导体设备（上海）股份有限公司主任工艺工程师

HU Jianzheng    Principle Member of Technical Stuff of Advanced Micro-Fabrication Equipment Inc. China

10:35-

10:50

茶歇/Tea Break

10:50-

11:15

大批量工艺制备的高质量氮化铝模板材料表征分析

Characterization of high-quality AlN templates in industrial massive production

吴亮    上海大学教授，Ultratrend Technologies Inc总裁

WU Liang    Professor of Shanghai University, CEO of Ultratrend Technologies Inc，

11:15-

11:35

基于氮化物半导体和碳化硅光电子器件的仿真与分析

Numerical modelling and experimental demonstration for Nitride and SiC optoelectronic devices

张紫辉    河北工业大学教授

ZHANG Zihui    Professor of Hebei University of Technology

11:35-

11:45

直接在4英寸高温退火溅射AlN模板上生长的AlGaN基紫外LED

AlGaN-based UV LED directly grown on 4-inch high-temperature annealed sputtered AlN template

倪茹雪    中国科学院半导体研究所

NI Ruxue    Institute of Semiconductors, Chinese Academy of Sciences

11:45-

11:55

采用n-Al_xGa_1-xN低波导层连续分级生长的深紫外纳米线激光二极管光学约束优化

Enhancement of Optical Confinement in Deep Ultraviolet Nanowire Laser Diode by Continuous-grading of n-Al_xGa_1-xN Lower Waveguide Layer.

Muhammad Nawaz SHARIF    郑州大学

Muhammad Nawaz SHARIF    Zhengzhou University

11:55-

12:05

可原子尺度精确调控的AlN/GaN结构分选生长

Digital-alloyed AlN/GaN superlattices featuring with integral monolayer scale by hierarchical growth units

高娜    厦门大学

GAO Na    Xiamen University

12:05-

12:15

用于DUV和EUV探测的高性能SiC肖特基势垒光电二极管

High-Performance SiC Schottky barrier photodiode for DUV and EUV detection

王致远    南京大学

WANG Zhiyuan    Nanjing University

12:15-

14:00

午休/ Adjourn

P208：Micro-LED与其他新型显示技术/ Micro-LED and other Novel Display

时间：2019年11月26日全天09:00 -17:40

地点：深圳会展中心•五层牡丹厅

Time: Nov 26^th, 2019 09:00 -17:40

Location: Shenzhen Convention and Exhibition Center • 5th Floor Peony Hall

演示文件建议尺寸比例/Recommend Slides Size：16:9

主持人

Moderator

郭太良/GUO Tailiang

福州大学教授/Professor of Fuzhou University

严群/YAN Qun

福州大学教授/Professor of Fuzhou University

洪震 / Zhong Hong  

中国光学光电子行业协会发光二极管显示应用分会秘书长

General Secretary of China Optics and Optoelectronics Manufactures Association LED Display Application Branch

09:00-

09:25

对于制造CMOS电源、高性能MicroLED显示的新概念

A New Concept for Fabricating CMOS-driven, High-Performance MicroLED Displays

Francois TEMPLIER    法国原子能委员会电子与信息技术实验室研究主任

Francois TEMPLIER    Research Director of CEA-LETI, France

09:25-

09:45

针对每平方厘米kW级别的高功率microLED三维热量传输研究

Study on three dimensional thermal transport in micro-LEDs at the level of kW/cm²

陈志忠    北京大学教授

CHEN Zhizhong    Professor of Peking University

09:45-

10:05

采用精准应力控制技术实现用于microLED显示的 '1 bin' 等级高波长均匀度（0.566 nm标准偏差）的8英寸硅基氮化镓LED

1 bin® wavelength uniformity on 200 mm GaN-on-Si LED for micro LED application with precise strain-engineering

Atsushi NISHIKAWA    德国ALLOS Semiconductors首席技术官

Atsushi NISHIKAWA    Chief Technology Officer of ALLOS Semiconductors, Germany

10:05-

10:25

面向MicroLED显示的III-V族LED与超薄硅晶体管集成技术

Integration of III-V LEDs with Silicon Thin Film Transistors for Micro-LED Displays

Vincent LEE    美国Lumiode, Inc.创立者兼总裁

Vincent LEE    Founder & CEO of Lumiode, Inc., USA

10:25-

10:40

茶歇/Coffee Break

10:40-

11:00

北方华创Mini-LED和Micro-LED产品解决方案

NAURA product solutions for Mini-LED and Micro-LED

张宝辉    北京北方华创微电子装备有限公司刻蚀事业部LED产品线总监

ZHANG Baohui    LED Product Line Director of ETCH BU, Beijing NAURA Microelectronics Equipment Co., Ltd.

11:00-

11:20

驱动技术推动Micro LED 显示及照明应用

Driving Micro LED to future Lighting and Display

邰中和    和莲光电科技股份有限公司董事长

Kenneth TAI     Board Chair of Jasper Display Corp. (JDC)

11:20-

11:40

纳米模板生长和制备非/半极性面LED及Micro-LED器件

Growth and fabrication of semi/non-polar LEDs and Micro-LEDs using nano-patterning technology  

刘斌    南京大学电子科学与工程学院副院长、教授

LIU Bin    Professor & Deputy Dean of School of Electronic Science and Engineering, Nanjing University

11:40-

12:00

针对MicroLED和OLED显示中亚像素评估的图像照明测量设备

Imaging Light Measurement Device for Subpixel evaluation of Micro-LED and OLED Displays

Tobias STEINEL    德国Instrument Systems optische Messtechnik GmbH

Tobias STEINEL    Instrument Systems optische Messtechnik GmbH, Germany

12:00-

14:00

午休与POSTER交流 / Adjourn & POSTER Communication

14:00-

14:25

2018-2019年度中国LED显示应用行业发展报告

China LED Display Application Industry Development Report 2018-2019

洪震    中国光学光电子行业协会发光二极管显示应用分会秘书长

HONG Zhen    General Secretary of China Optics and Optoelectronics Manufactures Association LED Display Application Branch

14:25-

14:45

MicroLED MOCVD工艺启动新一代显示技术

Enabling the Next Era of Display Technologies by Micro LED MOCVD Processing

Arthur BECKERS    德国爱思强股份有限公司高级产品市场经理

Arthur BECKERS    Senior Product Marketing Manager of AIXTRON SE, Germany

14:45-

15:05

新一代显示用LED芯片技术研究与展望

Research Progress and Prospects of LED Chips for Next Generation Display Application

李鹏    华灿光电股份有限公司副总裁

LI Peng    Vice President of HC SemiTek Corporation

15:05-

15:25

低毒性量子点复合材料LED器件应用

Low toxic quantum dots polymer nanocomposites for LED applications

徐庶    河北工业大学教授

XU Shu    Professor of Hebei University of Technology

15:25-

15:45

电荷转移对量子点电致发光器件寿命的影响

Influence of the Charge Transfer on the Lifetime of Quantum-Dot Light-Emitting Diodes

刘国旭    易美芯光（北京）科技有限公司执行副总裁兼首席技术官

Jay Guoxu LIU    Executive Vice President & CTO of ShineOn (Beijing) Technology

15:45-

16:00

茶歇/Coffee Break

16:00-

16:20

Micro/Mini-LED：从背光到直视显示

Micro/Mini-LED: From Backlight to Direct-view Display

谢相伟    TCL工业研究院新型显示技术部项目总监

XIE Xiangwei    Project Director of Novel Display Technology Department, TCL Industrial Research

16:20-

16:40

COB集成封装技术在超高清LED显示领域的应用

Application of COB Integrated Packaging Technology in UHD LED Display Field

屠孟龙  雷曼光电技术研究中心总监

TU Menglong    Technology Research Center Technical Director of Ledman Optoelectronic Co., Ltd.

16:40-

17:00

LED显示之四合一技术路线前景

Prospect analysis of the 4-in-1 technical approach in LED Display Field

孔一平    山东晶泰星光电科技有限公司首席运营官

KONG Yi-Ping    SHANDONG PROSPEOUS STAR OPTOELECTRONICS CO.,ltd., Chief Operating Officer

17:00-

17:20

Mini LED发展方向与集创解决方案

Mini LED, Future Directions and Solutions - from Chipone Technology

黄纹纲    北京集创北方科技股份有限公司产品经理

HUANG Wengang    Chipone Technology (Beijing) Co, Ltd. Product Manager

17:20-

17:40

携手发展的LCD与LED显示产业

Progress in Cooperation Between LCD and LED Industry

黄卫东    深圳市华星光电技术有限公司高工、博士

Huang Weidong      Senior Engineer of TCL China Star Optoelectronics Technology

P209：超宽禁带半导体技术/ Technologies for Ultra-Wide Bandgap Semiconductor

时间：2019年11月26日上午09:00 -12:00

地点：深圳会展中心•五层玫瑰厅2

Time: Nov 26^th, 2019 Morning 09:00-12:00

Location: Shenzhen Convention and Exhibition Center • 5th Floor Rose Hall 2

演示文件建议尺寸比例/Recommend Slides Size：4:3

主持人

Moderator

刘明/LIU Ming

中国科学院微电子研究所研究员，中国科学院院士/ Professor of Institute of Microelectronics of Chinese Academy of Sciences，Academician of Chinese Academy of Sciences

王宏兴/WANG Hongxing    

西安交通大学教授/Professor of Xi'an Jiaotong University

09:00-

09:25

超宽禁带氧化半导体的生长和特性

Growth and Characterization of Ultra-Wide Bandgap Oxide Semiconductors

郭其新    日本国立佐贺大学同步辐射光应用研究中心主任、电气电子系教授

Qixin GUO    Director and Professor of Synchrotron Light Application Center, Saga University, Japan

09:25-

09:50

氧化镓超宽禁带半导体器件

Gallium Oxide Ultra-Wide Bandgap Semiconductor Devices

龙世兵    中国科学院微电子所研究员，中国科学技术大学微电子学院执行院长

LONG Shibing    Professor of institute of microelectronics, CAS; Executive Dean of microelectronics college, University of Science and Technology of China

09:50-

10:15

金刚石超宽禁带半导体材料和器件新进展

Progress of diamond ultra-wide-band-gap semiconductor material and devices

张金风   西安电子科技大学教授

ZHANG Jinfeng    Professor of Xidian University

10:15-

10:30

茶歇/Coffee Break

10:30-

10:55

多晶金刚石微纳米粉在碳化硅晶圆加工中的应用及其关键工艺技术

Application of Polycrystalline Diamond Micro-nano Powder in SiC Wafer Processing and Its Key Process Technology

Christian JENTGENS    瑞士Microdiamant研发部门负责人 

Christian JENTGENS    Head of R&D department, Microdiamant, Switzerland

10:55-

11:20

氮化铝/蓝宝石模板上六方氮化硼薄膜的有机金属气相外延研究

Epitaxial Growth of Hexagonal Boron Nitride Films on AlN/Sapphire Templates by MOVPE

刘玉怀    郑州大学教授, 日本名古屋大学客座教授

LIU Yuhuai    Professor of Zhengzhou University, Visiting Professor of Nagoya University

11:20-

11:45

六方氮化硼薄膜的磁控溅射制备及光电特性

Preparation and photoelectric properties of BN films by RF-sputtering

李强    西安交通大学副教授

LI Qiang    Associate Professor of Xi’an Jiaotong University

11:45-

12:00

高质量h-BN薄层和针对III族氮化物外延的缓冲层应用

High quality h-BN thin films and their application as flexible buffer layer for III-nitrides epitaxy

刘放    北京大学

LIU Fang    Peking University

P210: 可靠性与热管理技术/ Technologies for Reliability and Thermal Management

时间：2019年11月26日上午09:00 -12:00

地点：深圳会展中心•五层玫瑰厅1

Time: Nov 26^th, 2019 Morning 09:00 -12:00

Location: Shenzhen Convention and Exhibition Center • 5th Floor Rose Hall 1

演示文件建议尺寸比例/Recommend Slides Size：4:3

主持人

Moderator

刘胜/LIU Sheng

武汉大学教授、动力与机械学院院长、工业科学研究院执行院长/Professor & Dean of School of Power and Mechanical Engineering, Executive Dean of the Institute of Tenological Sciences, Wuhan University

李世玮/ Shi-Wei.Ricky LEE

香港科技大学先进微系统封装中心主任、香港科技大学深圳研究院常务副院长/ Professor and Director of Center for Advanced Microsystems Packaging (CAMP) of Hong Kong University of Science and Technology. 

09:00-

09:25

多热阻阵列LED模块的结温监视

Junction Temperature Monitoring of the Multi-LED Module in Service with the Thermal Resistance Matrix

李世玮    香港科技大学先进微系统封装中心主任、香港科技大学深圳研究院常务副院长

Shi-Wei.Ricky LEE    Professor and Director of Center for Advanced Microsystems Packaging (CAMP) of Hong Kong University of Science and Technology. 

09:25-

09:50

采用表面声波微流控制技术操纵微粒子进入3D阵列模型

Manipulation of microparticles into 3D matrix patterns using standing surface acoustic waves (SAW) microfluidics

DU Hejun    新加坡南洋理工大学副教授

DU Hejun    Associate Professor of Nanyang Technological University, Singapore

09:50-

10:15

量子点LED封装的内部热管理

Internal thermal management of quantum dot LED packaging

罗小兵    华中科技大学能源与动力工程学院院长，中欧清洁与可再生能源学院中方院长

LUO Xiaobing    Professor & Dean of School of Energy and Power Engineering, China-Europe School for Clean and Renewable Energy, Huazhong University of Science and Technology

10:15-

10:40

高压LED及其可靠性研究

High voltage light emitting diode and its reliability

郭伟玲    北京工业大学教授

GUO Weiling    Professor of Beijing University of Technology

10:40-

10:55

茶歇/Coffee Break

10:55-

11:20

加速测试条件下高品质低成本的LED电源寿命对比性研究

A Comparative Study of the Life-Times of High-End and Low-Cost Off-Line LED Drivers Under Accelerated Test Conditions

Ferdinand KEIL    德国达姆施塔特工业大学研究助理

Ferdinand KEIL    Research Assistant of Technische Universität Darmstadt, Germany

11:20-

11:40

适用于可见光通信高带宽微发光二极管的可靠性分析

Reliability of High Bandwidth Micro-LEDs for Visible Light Communication

马占红    中国科学院半导体研究所

MA Zhanhong    Institute of Semiconductors, Chinese Academy of Science

11:40-

12:00

汽车前照灯用LED阵列模组的光、热设计

Optical-Thermal Design of LED Matrix Module for Automotive Headlamps

陈威    半导体照明联合创新国家重点实验室(常州基地)研发工程师

CHEN Wei    Research Engineer of Changzhou Institute of Technology Research for Solid State Lighting